TY  - JOUR
AU  - Mikulics, Martin
AU  - Adam, Roman
AU  - Sofer, Zdeněk
AU  - Hardtdegen, Hilde
AU  - Stanček, Stanislav
AU  - Knobbe, Jens
AU  - Kočan, Martin
AU  - Stejskal, Josef
AU  - Sedmidubský, David
AU  - Pavlovič, Márius
AU  - Nečas, Vladimír
AU  - Grützmacher, Detlev
AU  - Marso, Michel
TI  - Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates
JO  - Semiconductor science and technology
VL  - 25
IS  - 7
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2013-04810
SP  - 075001 
PY  - 2010
AB  - In this study, ultrafast GaAs metal–semiconductor–metal (MSM) photodetectors grown on aluminum mirrors/pseudo-substrates were fabricated and tested. Surface characterization measurements revealed the good quality of the surface morphology, while x-ray diffraction measurements showed several crystallographic orientations of the GaAs layer. The material exhibited a 50 fs carrier lifetime due to growth-induced defects. The response of the photodetectors showed a full width at half maximum of 300 fs. These results demonstrate that the growth of GaAs layers on lattice-mismatched metallic substrates with high thermal conductivity is a promising approach for low-cost and large-area fabrication of electronic and ultrafast photonic devices that require a highly effective thermal drain.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000279319600001
DO  - DOI:10.1088/0268-1242/25/7/075001
UR  - https://juser.fz-juelich.de/record/138723
ER  -