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| Home > Publications database > Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates > print |
| 001 | 138723 | ||
| 005 | 20210129212342.0 | ||
| 024 | 7 | _ | |a 10.1088/0268-1242/25/7/075001 |2 doi |
| 024 | 7 | _ | |a 0268-1242 |2 ISSN |
| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
| 024 | 7 | _ | |a WOS:000279319600001 |2 WOS |
| 037 | _ | _ | |a FZJ-2013-04810 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates |
| 260 | _ | _ | |a Bristol |c 2010 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1392725215_30880 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a In this study, ultrafast GaAs metal–semiconductor–metal (MSM) photodetectors grown on aluminum mirrors/pseudo-substrates were fabricated and tested. Surface characterization measurements revealed the good quality of the surface morphology, while x-ray diffraction measurements showed several crystallographic orientations of the GaAs layer. The material exhibited a 50 fs carrier lifetime due to growth-induced defects. The response of the photodetectors showed a full width at half maximum of 300 fs. These results demonstrate that the growth of GaAs layers on lattice-mismatched metallic substrates with high thermal conductivity is a promising approach for low-cost and large-area fabrication of electronic and ultrafast photonic devices that require a highly effective thermal drain. |
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| 700 | 1 | _ | |a Adam, Roman |0 P:(DE-Juel1)130495 |b 1 |
| 700 | 1 | _ | |a Sofer, Zdeněk |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 3 |
| 700 | 1 | _ | |a Stanček, Stanislav |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Knobbe, Jens |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Kočan, Martin |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Stejskal, Josef |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Sedmidubský, David |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Pavlovič, Márius |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Nečas, Vladimír |0 P:(DE-HGF)0 |b 10 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 11 |
| 700 | 1 | _ | |a Marso, Michel |0 P:(DE-HGF)0 |b 12 |
| 773 | _ | _ | |a 10.1088/0268-1242/25/7/075001 |g Vol. 25, no. 7, p. 075001 - |p 075001 |n 7 |0 PERI:(DE-600)1361285-2 |t Semiconductor science and technology |v 25 |y 2010 |x 1361-6641 |
| 856 | 4 | _ | |z Published final document. |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/138723/files/FZJ-2013-04810_PV.pdf |z Published final document. |y Restricted |
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