TY  - JOUR
AU  - Rieger, Torsten
AU  - Lepsa, Mihail Ion
AU  - Schäpers, Thomas
AU  - Grützmacher, Detlev
TI  - Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
JO  - Journal of crystal growth
VL  - 378
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2013-04855
SP  - 506 - 510
PY  - 2013
AB  - The control of the Ga droplet during the MBE growth and its impact on the crystal structure of self-catalyzed GaAs nanowires (NWs) were investigated. The consumption of the droplet proceeds in two steps. First, the contact angle decreases to 90° keeping the NW diameter constant. The crystal structure changes from zinc blende (ZB) to wurtzite (WZ). Then, the contact angle keeps constant while the top radius of the NW decreases and the NW grows again in ZB configuration. During the last step, {110}, {211}B and {100} facets develop at the top. Calculations show that the Ga desorption from the droplet has to be taken into account during its consumption. With this information, several WZ segments of different lengths were placed into ZB GaAs NWs via partial droplet consumption. For this purpose, we supplied As and Ga separately, in order to partially consume and refill the Ga droplet. The same mechanism was applied to self-catalyzed InAs NWs resulting in short WZ segments inserted in a ZB twinning superlattice.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000323355900125
DO  - DOI:10.1016/j.jcrysgro.2012.12.035
UR  - https://juser.fz-juelich.de/record/138771
ER  -