% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Rieger:138771,
      author       = {Rieger, Torsten and Lepsa, Mihail Ion and Schäpers, Thomas
                      and Grützmacher, Detlev},
      title        = {{C}ontrolled wurtzite inclusions in self-catalyzed zinc
                      blende {III}–{V} semiconductor nanowires},
      journal      = {Journal of crystal growth},
      volume       = {378},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2013-04855},
      pages        = {506 - 510},
      year         = {2013},
      abstract     = {The control of the Ga droplet during the MBE growth and its
                      impact on the crystal structure of self-catalyzed GaAs
                      nanowires (NWs) were investigated. The consumption of the
                      droplet proceeds in two steps. First, the contact angle
                      decreases to 90° keeping the NW diameter constant. The
                      crystal structure changes from zinc blende (ZB) to wurtzite
                      (WZ). Then, the contact angle keeps constant while the top
                      radius of the NW decreases and the NW grows again in ZB
                      configuration. During the last step, {110}, {211}B and {100}
                      facets develop at the top. Calculations show that the Ga
                      desorption from the droplet has to be taken into account
                      during its consumption. With this information, several WZ
                      segments of different lengths were placed into ZB GaAs NWs
                      via partial droplet consumption. For this purpose, we
                      supplied As and Ga separately, in order to partially consume
                      and refill the Ga droplet. The same mechanism was applied to
                      self-catalyzed InAs NWs resulting in short WZ segments
                      inserted in a ZB twinning superlattice.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000323355900125},
      doi          = {10.1016/j.jcrysgro.2012.12.035},
      url          = {https://juser.fz-juelich.de/record/138771},
}