TY  - JOUR
AU  - Grap, Th
AU  - Rieger, T
AU  - Blömers, Christian
AU  - Schäpers, Thomas
AU  - Grützmacher, D
AU  - Lepsa, M I
TI  - Self-catalyzed VLS grown InAs nanowires with twinning superlattices
JO  - Nanotechnology
VL  - 24
IS  - 33
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2013-04859
SP  - 335601 -
PY  - 2013
AB  - We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor–liquid–solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000322377600010
DO  - DOI:10.1088/0957-4484/24/33/335601
UR  - https://juser.fz-juelich.de/record/138775
ER  -