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@ARTICLE{Grap:138775,
author = {Grap, Th and Rieger, T and Blömers, Christian and
Schäpers, Thomas and Grützmacher, D and Lepsa, M I},
title = {{S}elf-catalyzed {VLS} grown {I}n{A}s nanowires with
twinning superlattices},
journal = {Nanotechnology},
volume = {24},
number = {33},
issn = {1361-6528},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2013-04859},
pages = {335601 -},
year = {2013},
abstract = {We report on the self-catalyzed growth of InAs nanowires by
molecular beam epitaxy on GaAs substrates covered by a thin
silicon oxide layer. Clear evidence is presented to
demonstrate that, under our experimental conditions, the
growth takes place by the vapor–liquid–solid (VLS)
mechanism via an In droplet. The nanowire growth rate is
controlled by the arsenic pressure while the diameter
depends mainly on the In rate. The contact angle of the In
droplet is smaller than that of the Ga droplet involved in
the growth of GaAs nanowires, resulting in much lower growth
rates. The crystal structure of the VLS grown InAs nanowires
is zinc blende with regularly spaced rotational twins
forming a twinning superlattice.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000322377600010},
doi = {10.1088/0957-4484/24/33/335601},
url = {https://juser.fz-juelich.de/record/138775},
}