Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

Pud, S.; Petrychuk, M.; Li, Jing; Offenhausser, A.; Acevedo, A.; Vitusevich, S.; Sibiliev, V.

doi:10.1109/ICNF.2013.6578984

Contribution to a conference proceedings

FZJ-2013-05051

Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

Pud, S. (Corresponding author)ICS-8*FZJ* ; Li, J.FZJ* ; Sibiliev, V.FZJ* ; Petrychuk, M. ; Acevedo, A. ; Offenhausser, A.FZJ* ; Vitusevich, S.FZJ*

2013
IEEE

2013 International Conference on Noise and Fluctuations (ICNF), Montpellier, France, 24 Jun 2013 - 28 Jun 2013 IEEE Th-P-1-4 (2013) [10.1109/ICNF.2013.6578984]

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Please use a persistent id in citations: doi:10.1109/ICNF.2013.6578984

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Appears in the scientific report 2013

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Record created 2013-11-06, last modified 2024-06-19

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