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Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation3
Sydoruk, V.FZJ* ; Goss, K.FZJ* ; Meyer, C.FZJ* ; Danilchenko, B. A. ; Petrychuk, M. V. ; Li, J.FZJ* ; Pud, S.ICS-8*FZJ* ; Vitusevich, S. (Corresponding author)FZJ*
2013
IEEE
20132013 International Conference on Noise and Fluctuations (ICNF), MontpellierMontpellier, France, 24 Jun 2013 - 28 Jun 20132013-06-242013-06-28
IEEE Tu-45-1-4 (2013) [10.1109/ICNF.2013.6578937]2013
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Please use a persistent id in citations: doi:10.1109/ICNF.2013.6578937
Contributing Institute(s):
- Bioelektronik (PGI-8)
- JARA-FIT (JARA-FIT)
- Bioelektronik (ICS-8)
- Elektronische Eigenschaften (PGI-6)
Research Program(s):
- 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)
- 453 - Physics of the Cell (POF2-453) (POF2-453)
Appears in the scientific report
2013