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@ARTICLE{Lambertz:139294,
author = {Lambertz, A. and Smirnov, V. and Merdzhanova, T. and Ding,
K. and Haas, Stefan and Jost, G. and Schropp, R. E. I. and
Finger, F. and Rau, U.},
title = {{M}icrocrystalline silicon–oxygen alloys for application
in silicon solar cells and modules},
journal = {Solar energy materials $\&$ solar cells},
volume = {119},
issn = {0927-0248},
address = {Amsterdam},
publisher = {North Holland},
reportid = {FZJ-2013-05292},
pages = {134 - 143},
year = {2013},
abstract = {Microcrystalline silicon oxide (mc-SiOx:H) alloys prepared
by plasma enhanced chemical vapor deposition (PECVD)
represent a versatile material class for opto-electronic
applications especially for thin-film and wafer based
silicon solar cells. The material is a phase mixture of
microcrystalline silicon (mc-Si:H) and amorphous silicon
oxide (a-SiOx:H). The possibility to enhance the optical
band gap energy and to adjust the refractive index over a
considerable range, together with the possibility to dope
the material p-type as well as n-type, makes μc-SiOx:H an
ideal material for the application as window layer, as
intermediate reflector (IR), and as back reflector in
thin-film silicon solar cells. Analogously, μc-SiOx:H is a
suitable material for p- and n-type contact layers in
silicon hetero junction (SHJ) solar cells. The present paper
gives an overview on the range of physical parameters
(refractive index, optical band gap, conductivity) which can
be covered by this material by variation of the deposition
conditions. The paper focuses on the interdependence between
these material properties and optical improvements for
amorphous silicon/ microcrystalline silicon (a-Si:H/mc-Si:H)
tandem solar cells prepared on different substrates, such as
Asahi (VU) and sputtered ZnO:Al. It gives a guideline on
possible optical gains when using doped mc-SiOx:H in silicon
based solar cells. As intermediate reflector in
a-Si:H/mc-Si:H tandem cells mc-SiOx:H leads to an effective
transfer of short circuit current generation from the bottom
cell to the top cell resulting in a possible thickness
reduction of the top cell by $40\%.$ Within another series
of solar cells shown in this paper a short circuit current
density of 14.1mA/cm² for an a-Si:H/mc-Si:H tandem solar
cell with a mc-SiOx:H intermediate reflector is
demonstrated. A SHJ solar cell on a flat (non-textured)
wafer using p- and n-type doped mc-SiOx:H contact layers
with an effective area efficiency of $19.0\%$ is also
presented. $\&$},
cin = {IEK-5},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {111 - Thin Film Photovoltaics (POF2-111)},
pid = {G:(DE-HGF)POF2-111},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000326908000017},
doi = {10.1016/j.solmat.2013.05.053},
url = {https://juser.fz-juelich.de/record/139294},
}