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@ARTICLE{Lambertz:139294,
      author       = {Lambertz, A. and Smirnov, V. and Merdzhanova, T. and Ding,
                      K. and Haas, Stefan and Jost, G. and Schropp, R. E. I. and
                      Finger, F. and Rau, U.},
      title        = {{M}icrocrystalline silicon–oxygen alloys for application
                      in silicon solar cells and modules},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {119},
      issn         = {0927-0248},
      address      = {Amsterdam},
      publisher    = {North Holland},
      reportid     = {FZJ-2013-05292},
      pages        = {134 - 143},
      year         = {2013},
      abstract     = {Microcrystalline silicon oxide (mc-SiOx:H) alloys prepared
                      by plasma enhanced chemical vapor deposition (PECVD)
                      represent a versatile material class for opto-electronic
                      applications especially for thin-film and wafer based
                      silicon solar cells. The material is a phase mixture of
                      microcrystalline silicon (mc-Si:H) and amorphous silicon
                      oxide (a-SiOx:H). The possibility to enhance the optical
                      band gap energy and to adjust the refractive index over a
                      considerable range, together with the possibility to dope
                      the material p-type as well as n-type, makes μc-SiOx:H an
                      ideal material for the application as window layer, as
                      intermediate reflector (IR), and as back reflector in
                      thin-film silicon solar cells. Analogously, μc-SiOx:H is a
                      suitable material for p- and n-type contact layers in
                      silicon hetero junction (SHJ) solar cells. The present paper
                      gives an overview on the range of physical parameters
                      (refractive index, optical band gap, conductivity) which can
                      be covered by this material by variation of the deposition
                      conditions. The paper focuses on the interdependence between
                      these material properties and optical improvements for
                      amorphous silicon/ microcrystalline silicon (a-Si:H/mc-Si:H)
                      tandem solar cells prepared on different substrates, such as
                      Asahi (VU) and sputtered ZnO:Al. It gives a guideline on
                      possible optical gains when using doped mc-SiOx:H in silicon
                      based solar cells. As intermediate reflector in
                      a-Si:H/mc-Si:H tandem cells mc-SiOx:H leads to an effective
                      transfer of short circuit current generation from the bottom
                      cell to the top cell resulting in a possible thickness
                      reduction of the top cell by $40\%.$ Within another series
                      of solar cells shown in this paper a short circuit current
                      density of 14.1mA/cm² for an a-Si:H/mc-Si:H tandem solar
                      cell with a mc-SiOx:H intermediate reflector is
                      demonstrated. A SHJ solar cell on a flat (non-textured)
                      wafer using p- and n-type doped mc-SiOx:H contact layers
                      with an effective area efficiency of $19.0\%$ is also
                      presented. $\&$},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111)},
      pid          = {G:(DE-HGF)POF2-111},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000326908000017},
      doi          = {10.1016/j.solmat.2013.05.053},
      url          = {https://juser.fz-juelich.de/record/139294},
}