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000139334 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding author
000139334 245__ $$aTensely strained GeSn alloys as optical gain media
000139334 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000139334 520__ $$aThis letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94Sn0.06 and even without any n-type doping for Ge 0.92Sn0.08.
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000139334 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b1
000139334 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b2$$ufzj
000139334 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b3
000139334 7001_ $$0P:(DE-Juel1)128637$$aStoica, T.$$b4
000139334 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b5
000139334 7001_ $$0P:(DE-Juel1)138352$$aBreuer, U.$$b6
000139334 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b7
000139334 7001_ $$0P:(DE-HGF)0$$aBenedetti, A.$$b8
000139334 7001_ $$0P:(DE-HGF)0$$aChiussi, S.$$b9
000139334 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b10
000139334 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b11
000139334 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b12
000139334 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4829360$$gVol. 103, no. 19, p. 192110 -$$n19$$p192110 -$$tApplied physics letters$$v103$$x0003-6951$$y2013
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