TY  - JOUR
AU  - Wirths, S.
AU  - Ikonic, Z.
AU  - Tiedemann, Andreas
AU  - Holländer, B.
AU  - Stoica, T.
AU  - Mussler, G.
AU  - Breuer, U.
AU  - Hartmann, J. M.
AU  - Benedetti, A.
AU  - Chiussi, S.
AU  - Grützmacher, D.
AU  - Mantl, S.
AU  - Buca, D.
TI  - Tensely strained GeSn alloys as optical gain media
JO  - Applied physics letters
VL  - 103
IS  - 19
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-05331
SP  - 192110 -
PY  - 2013
AB  - This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94Sn0.06 and even without any n-type doping for Ge 0.92Sn0.08.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000327817000040
DO  - DOI:10.1063/1.4829360
UR  - https://juser.fz-juelich.de/record/139334
ER  -