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001     139334
005     20210129212544.0
024 7 _ |a 10.1063/1.4829360
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037 _ _ |a FZJ-2013-05331
082 _ _ |a 530
100 1 _ |a Wirths, S.
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245 _ _ |a Tensely strained GeSn alloys as optical gain media
260 _ _ |a Melville, NY
|c 2013
|b American Institute of Physics
336 7 _ |a Journal Article
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500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94Sn0.06 and even without any n-type doping for Ge 0.92Sn0.08.
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700 1 _ |a Ikonic, Z.
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700 1 _ |a Tiedemann, Andreas
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700 1 _ |a Holländer, B.
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700 1 _ |a Stoica, T.
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700 1 _ |a Mussler, G.
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700 1 _ |a Breuer, U.
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700 1 _ |a Hartmann, J. M.
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700 1 _ |a Benedetti, A.
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700 1 _ |a Chiussi, S.
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700 1 _ |a Grützmacher, D.
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700 1 _ |a Mantl, S.
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700 1 _ |a Buca, D.
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773 _ _ |a 10.1063/1.4829360
|g Vol. 103, no. 19, p. 192110 -
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|t Applied physics letters
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|y 2013
|x 0003-6951
856 4 _ |y Publishers version according to licensing conditions.
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856 4 _ |u https://juser.fz-juelich.de/record/139334/files/FZJ-2013-05331.pdf
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