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@ARTICLE{Reuters:139341,
      author       = {Reuters, Benjamin and Wille, A. and Ketteniss, N. and Hahn,
                      H. and Holländer, B. and Heuken, M. and Kalisch, H. and
                      Vescan, A.},
      title        = {{P}olarization-{E}ngineered {E}nhancement-{M}ode
                      {H}igh-{E}lectron-{M}obility {T}ransistors {U}sing
                      {Q}uaternary {A}l{I}n{G}a{N} {B}arrier {L}ayers},
      journal      = {Journal of electronic materials},
      volume       = {42},
      number       = {5},
      issn         = {1543-186X},
      address      = {Warrendale, Pa},
      publisher    = {TMS},
      reportid     = {FZJ-2013-05338},
      pages        = {826 - 832},
      year         = {2013},
      abstract     = {Group III nitride heterostructures with low polarization
                      difference recently moved into the focus of research for
                      realization of enhancement-mode (e-mode) transistors.
                      Quaternary AlInGaN layers as barriers in GaN-based
                      high-electron-mobility transistors (HEMTs) offer the
                      possibility to perform polarization engineering, which
                      allows control of the threshold voltage over a wide range
                      from negative to positive values by changing the composition
                      and strain state of the barrier. Tensile-strained AlInGaN
                      layers with high Al contents generate high two-dimensional
                      electron gas (2DEG) densities, due to the large spontaneous
                      polarization and the contributing piezoelectric
                      polarization. To lower the 2DEG density for e-mode HEMT
                      operation, the polarization difference between the barrier
                      and the GaN buffer has to be reduced. Here, two different
                      concepts are discussed. The first is to generate compressive
                      strain with layers having high In contents in order to
                      induce a positive piezoelectric polarization compensating
                      the large negative spontaneous polarization. Another novel
                      approach is a lattice-matched Ga-rich AlInGaN/GaN
                      heterostructure with low spontaneous polarization and
                      improved crystal quality as strain-related effects are
                      eliminated. Both concepts for e-mode HEMTs are presented and
                      compared in terms of electrical performance and structural
                      properties.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000317988300008},
      doi          = {10.1007/s11664-013-2473-7},
      url          = {https://juser.fz-juelich.de/record/139341},
}