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001     139395
005     20240708133632.0
037 _ _ |a FZJ-2013-05391
082 _ _ |a 600
100 1 _ |a Gunes, Mehmet
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245 _ _ |a Conductance fuctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films
260 _ _ |a Dordrecht [u.a.]
|c 2003
|b Springer Science + Business Media B.V
336 7 _ |a Journal Article
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520 _ _ |a Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (c-Si : H) thin films grown by VHF-PECVD from silane–hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped c-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope =0.600.07 and at higher temperatures, the noise with the slope close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystallinity.
536 _ _ |a 111 - Thin Film Photovoltaics (POF2-111)
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700 1 _ |a Johanson, R E
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700 1 _ |a Kasap, S O
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700 1 _ |a Finger, F
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700 1 _ |a Lambertz, A
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773 _ _ |0 PERI:(DE-600)2016994-2
|p 731 - 732
|t Journal of materials science / Materials in electronics
|v 14
|y 2003
|x 0957-4522
909 C O |o oai:juser.fz-juelich.de:139395
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910 1 _ |a Forschungszentrum Jülich GmbH
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|b Forschungsbereich Energie
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