000139449 001__ 139449
000139449 005__ 20240708133622.0
000139449 037__ $$aFZJ-2013-05438
000139449 041__ $$aEnglish
000139449 1001_ $$0P:(DE-Juel1)130271$$aMuthmann, Stefan$$b0$$eCorresponding author$$ufzj
000139449 1112_ $$aMaterial Research Society Spring Meeting$$cSan Francisco$$d2013-04-01 - 2013-04-05$$wUSA
000139449 245__ $$aIn-situ Methods Applied to Study the Chemical Vapor Deposition of Thin-film Silicon
000139449 260__ $$c2013
000139449 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1385124118_8582$$xInvited
000139449 3367_ $$033$$2EndNote$$aConference Paper
000139449 3367_ $$2DataCite$$aOther
000139449 3367_ $$2ORCID$$aLECTURE_SPEECH
000139449 3367_ $$2DRIVER$$aconferenceObject
000139449 3367_ $$2BibTeX$$aINPROCEEDINGS
000139449 520__ $$aSolar module efficiencies above 14 % are the avowed aim of thin-film silicon technology. To achieve this ambitious goal, stacks of layers with properties customized for their purpose like absorption, reflection and conduction are required. To fulfill these demands a precise understanding and control of the utilized deposition processes is necessary. A variety of in-situ measurement methods are available to determine structure and optical properties of the growing films as well as the composition of the gas phase during deposition. These techniques help to improve the understanding of the complex interplay between gas phase processes and the properties of growing films during chemical vapor deposition.
We combine in-situ measurement techniques that allow the determination of material properties during growth, like transmission measurements or in-situ Raman spectroscopy with measurements of the gas phase like optical emission spectroscopy and Fourier-transform-infrared spectroscopy. Accordingly, the knowledge about the silicon deposition process is increased and a precise control of the material growth is enabled.
We will present results on the optimization of the plasma deposition of microcrystalline silicon through information obtained in-situ. Using in-situ Raman spectroscopy the crystalline volume fraction and the film temperature are measured. Combining these measurements with optical emission spectroscopy the reaction of the film growth to changes of the plasma composition is observed in-situ. Transmission measurements additionally are applied to provide online information about the absorbance and the reflective index of the growing films. Hence, it is possible to deposit thin silicon films with properties tailored for their application in solar cell devices.
000139449 536__ $$0G:(DE-HGF)POF2-111$$a111 - Thin Film Photovoltaics (POF2-111)$$cPOF2-111$$fPOF II$$x0
000139449 536__ $$0G:(DE-Juel1)HITEC-20170406$$aHITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)$$cHITEC-20170406$$x1
000139449 7001_ $$0P:(DE-Juel1)151151$$aFink, Thomas$$b1$$ufzj
000139449 7001_ $$0P:(DE-Juel1)130830$$aMeier, Matthias$$b2$$ufzj
000139449 7001_ $$0P:(DE-Juel1)140348$$aGrootoonk, Björn$$b3$$ufzj
000139449 7001_ $$0P:(DE-Juel1)130306$$aWördenweber, Jan$$b4$$ufzj
000139449 7001_ $$0P:(DE-Juel1)130225$$aCarius, Reinhard$$b5$$ufzj
000139449 7001_ $$0P:(DE-Juel1)130242$$aGordijn, Aad$$b6$$ufzj
000139449 909CO $$ooai:juser.fz-juelich.de:139449$$pVDB
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130271$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)151151$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130830$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)140348$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130306$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130225$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000139449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130242$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000139449 9131_ $$0G:(DE-HGF)POF2-111$$1G:(DE-HGF)POF2-110$$2G:(DE-HGF)POF2-100$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vThin Film Photovoltaics$$x0
000139449 9141_ $$y2013
000139449 920__ $$lyes
000139449 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000139449 980__ $$aconf
000139449 980__ $$aVDB
000139449 980__ $$aUNRESTRICTED
000139449 980__ $$aI:(DE-Juel1)IEK-5-20101013
000139449 981__ $$aI:(DE-Juel1)IMD-3-20101013