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@INPROCEEDINGS{Muthmann:139449,
      author       = {Muthmann, Stefan and Fink, Thomas and Meier, Matthias and
                      Grootoonk, Björn and Wördenweber, Jan and Carius, Reinhard
                      and Gordijn, Aad},
      title        = {{I}n-situ {M}ethods {A}pplied to {S}tudy the {C}hemical
                      {V}apor {D}eposition of {T}hin-film {S}ilicon},
      reportid     = {FZJ-2013-05438},
      year         = {2013},
      abstract     = {Solar module efficiencies above 14 $\%$ are the avowed aim
                      of thin-film silicon technology. To achieve this ambitious
                      goal, stacks of layers with properties customized for their
                      purpose like absorption, reflection and conduction are
                      required. To fulfill these demands a precise understanding
                      and control of the utilized deposition processes is
                      necessary. A variety of in-situ measurement methods are
                      available to determine structure and optical properties of
                      the growing films as well as the composition of the gas
                      phase during deposition. These techniques help to improve
                      the understanding of the complex interplay between gas phase
                      processes and the properties of growing films during
                      chemical vapor deposition. We combine in-situ measurement
                      techniques that allow the determination of material
                      properties during growth, like transmission measurements or
                      in-situ Raman spectroscopy with measurements of the gas
                      phase like optical emission spectroscopy and
                      Fourier-transform-infrared spectroscopy. Accordingly, the
                      knowledge about the silicon deposition process is increased
                      and a precise control of the material growth is enabled. We
                      will present results on the optimization of the plasma
                      deposition of microcrystalline silicon through information
                      obtained in-situ. Using in-situ Raman spectroscopy the
                      crystalline volume fraction and the film temperature are
                      measured. Combining these measurements with optical emission
                      spectroscopy the reaction of the film growth to changes of
                      the plasma composition is observed in-situ. Transmission
                      measurements additionally are applied to provide online
                      information about the absorbance and the reflective index of
                      the growing films. Hence, it is possible to deposit thin
                      silicon films with properties tailored for their application
                      in solar cell devices.},
      month         = {Apr},
      date          = {2013-04-01},
      organization  = {Material Research Society Spring
                       Meeting, San Francisco (USA), 1 Apr
                       2013 - 5 Apr 2013},
      subtyp        = {Invited},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-111 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/139449},
}