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| Home > Publications database > In-situ Methods Applied to Study the Chemical Vapor Deposition of Thin-film Silicon > print |
| 001 | 139449 | ||
| 005 | 20240708133622.0 | ||
| 037 | _ | _ | |a FZJ-2013-05438 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Muthmann, Stefan |0 P:(DE-Juel1)130271 |b 0 |u fzj |e Corresponding author |
| 111 | 2 | _ | |a Material Research Society Spring Meeting |c San Francisco |d 2013-04-01 - 2013-04-05 |w USA |
| 245 | _ | _ | |a In-situ Methods Applied to Study the Chemical Vapor Deposition of Thin-film Silicon |
| 260 | _ | _ | |c 2013 |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1385124118_8582 |2 PUB:(DE-HGF) |x Invited |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a Solar module efficiencies above 14 % are the avowed aim of thin-film silicon technology. To achieve this ambitious goal, stacks of layers with properties customized for their purpose like absorption, reflection and conduction are required. To fulfill these demands a precise understanding and control of the utilized deposition processes is necessary. A variety of in-situ measurement methods are available to determine structure and optical properties of the growing films as well as the composition of the gas phase during deposition. These techniques help to improve the understanding of the complex interplay between gas phase processes and the properties of growing films during chemical vapor deposition.
We combine in-situ measurement techniques that allow the determination of material properties during growth, like transmission measurements or in-situ Raman spectroscopy with measurements of the gas phase like optical emission spectroscopy and Fourier-transform-infrared spectroscopy. Accordingly, the knowledge about the silicon deposition process is increased and a precise control of the material growth is enabled.
We will present results on the optimization of the plasma deposition of microcrystalline silicon through information obtained in-situ. Using in-situ Raman spectroscopy the crystalline volume fraction and the film temperature are measured. Combining these measurements with optical emission spectroscopy the reaction of the film growth to changes of the plasma composition is observed in-situ. Transmission measurements additionally are applied to provide online information about the absorbance and the reflective index of the growing films. Hence, it is possible to deposit thin silicon films with properties tailored for their application in solar cell devices. |
| 536 | _ | _ | |a 111 - Thin Film Photovoltaics (POF2-111) |0 G:(DE-HGF)POF2-111 |c POF2-111 |x 0 |f POF II |
| 536 | _ | _ | |0 G:(DE-Juel1)HITEC-20170406 |x 1 |c HITEC-20170406 |a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) |
| 700 | 1 | _ | |a Fink, Thomas |0 P:(DE-Juel1)151151 |b 1 |u fzj |
| 700 | 1 | _ | |a Meier, Matthias |0 P:(DE-Juel1)130830 |b 2 |u fzj |
| 700 | 1 | _ | |a Grootoonk, Björn |0 P:(DE-Juel1)140348 |b 3 |u fzj |
| 700 | 1 | _ | |a Wördenweber, Jan |0 P:(DE-Juel1)130306 |b 4 |u fzj |
| 700 | 1 | _ | |a Carius, Reinhard |0 P:(DE-Juel1)130225 |b 5 |u fzj |
| 700 | 1 | _ | |a Gordijn, Aad |0 P:(DE-Juel1)130242 |b 6 |u fzj |
| 909 | C | O | |o oai:juser.fz-juelich.de:139449 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)130271 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)151151 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)130830 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)140348 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)130306 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)130225 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)130242 |
| 913 | 1 | _ | |a DE-HGF |b Energie |l Erneuerbare Energien |1 G:(DE-HGF)POF2-110 |0 G:(DE-HGF)POF2-111 |2 G:(DE-HGF)POF2-100 |v Thin Film Photovoltaics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)IEK-5-20101013 |k IEK-5 |l Photovoltaik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
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