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@ARTICLE{Ding:139501,
      author       = {Ding, Kaining and Aeberhard, Urs and Astakhov, Oleksandr
                      and Beyer, Wolfhard and Finger, Friedhelm and Carius,
                      Reinhard and Rau, Uwe},
      title        = {{O}ptically active defects in {S}i{C}, {S}i{O}x single
                      layers and {S}i{C}/{S}i{O}x hetero-superlattices},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {129},
      issn         = {1879-3398},
      address      = {Amsterdam},
      publisher    = {North Holland},
      reportid     = {FZJ-2013-05485},
      pages        = {3-6},
      year         = {2014},
      abstract     = {We investigated the evolution of the spectrally resolved
                      absorption coefficients of SiC and SiOx materials as well as
                      of their multilayer systems during thermal annealing and
                      hydrogen passivation, with focus on the nature of optically
                      active defects induced during annealing. We propose that
                      both dangling bonds (paramagnetic defects) and strained
                      bonds (non-paramagnetic defects) formed during annealing
                      contribute to the sub-band gap absorption and that the
                      associated defects can be partially removed by hydrogen
                      reincorporation. The difference in the evolution of the
                      absorption spectra for different sample types upon annealing
                      and passivation are linked to the fundamental difference in
                      their atomic structures. The much lower optical band gap and
                      the significantly higher sub-band gap absorption of SiC
                      single layers in the annealed state as compared to SiOx
                      single layers can be traced back to the lower flexibility of
                      the relatively dense 4-fold coordinated atomic structure of
                      the SiC material.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111)},
      pid          = {G:(DE-HGF)POF2-111},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000342267400002},
      doi          = {10.1016/j.solmat.2013.10.012},
      url          = {https://juser.fz-juelich.de/record/139501},
}