Home > Publications database > Details of the Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots > print

001     139589
005     20240610115955.0
037 _ _ |a FZJ-2013-05571
041 _ _ |a English
100 1 _ |a Eisele, H.
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111 2 _ |a 40th International Symposium on Compound Semiconductors
|c Kobe
|d 2013-05-19 - 2013-05-23
|w Japan
245 _ _ |a Details of the Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots
260 _ _ |c 2013
336 7 _ |a Conference Presentation
|b conf
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|s 1384954996_32292
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336 7 _ |a Conference Paper
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336 7 _ |a Other
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336 7 _ |a LECTURE_SPEECH
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336 7 _ |a conferenceObject
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336 7 _ |a INPROCEEDINGS
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536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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700 1 _ |a Lenz, A.
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700 1 _ |a Ebert, Philipp
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700 1 _ |a Liu, N.
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700 1 _ |a Prohl, C.
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700 1 _ |a Dähne, M
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700 1 _ |a Shih, C. K.
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909 C O |o oai:juser.fz-juelich.de:139589
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 1 _ |a DE-HGF
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914 1 _ |y 2013
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-5-20110106
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980 _ _ |a conf
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980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209

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