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000139621 037__ $$aFZJ-2013-05602
000139621 041__ $$aEnglish
000139621 1001_ $$0P:(DE-HGF)0$$aEisele, H.$$b0$$eCorresponding author
000139621 1112_ $$aInternational Conference of Materials for Advance Technologies 2013$$cSingapore$$d2013-06-30 - 2013-07-05$$wSingapore
000139621 245__ $$aDetails of the Mass Transfers during Growth and Capping of In(Ga)As/GaAs Quantum Dots
000139621 260__ $$c2013
000139621 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1384955528_32291$$xOther
000139621 3367_ $$033$$2EndNote$$aConference Paper
000139621 3367_ $$2DataCite$$aOther
000139621 3367_ $$2ORCID$$aLECTURE_SPEECH
000139621 3367_ $$2DRIVER$$aconferenceObject
000139621 3367_ $$2BibTeX$$aINPROCEEDINGS
000139621 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000139621 7001_ $$0P:(DE-HGF)0$$aLenz, A.$$b1
000139621 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b2$$ufzj
000139621 7001_ $$0P:(DE-HGF)0$$aLiu, N.$$b3
000139621 7001_ $$0P:(DE-HGF)0$$aDähne, M.$$b4
000139621 7001_ $$0P:(DE-HGF)0$$aShih, C. K.$$b5
000139621 909CO $$ooai:juser.fz-juelich.de:139621$$pVDB
000139621 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130627$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000139621 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000139621 9141_ $$y2013
000139621 920__ $$lyes
000139621 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000139621 980__ $$aconf
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000139621 980__ $$aI:(DE-Juel1)PGI-5-20110106
000139621 981__ $$aI:(DE-Juel1)ER-C-1-20170209