000139806 001__ 139806 000139806 005__ 20210129212702.0 000139806 0247_ $$2doi$$a10.1063/1.4833550 000139806 0247_ $$2ISSN$$a1077-3118 000139806 0247_ $$2ISSN$$a0003-6951 000139806 0247_ $$2WOS$$aWOS:000327696300040 000139806 0247_ $$2Handle$$a2128/16837 000139806 037__ $$aFZJ-2013-05777 000139806 082__ $$a530 000139806 1001_ $$0P:(DE-HGF)0$$aMelville, A.$$b0$$eCorresponding author 000139806 245__ $$aEpitaxial growth of europium monoxide on diamond 000139806 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013 000139806 3367_ $$2DRIVER$$aarticle 000139806 3367_ $$2DataCite$$aOutput Types/Journal article 000139806 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1385645094_8169 000139806 3367_ $$2BibTeX$$aARTICLE 000139806 3367_ $$2ORCID$$aJOURNAL_ARTICLE 000139806 3367_ $$00$$2EndNote$$aJournal Article 000139806 500__ $$3POF3_Assignment on 2016-02-29 000139806 520__ $$aWe report the epitaxial integration of phase-pure EuO on both single-crystal diamond and onepitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxialorientation relationship is (001) EuO k (001) diamond and [110] EuO k [100] diamond. The EuOlayer is nominally unstrained and ferromagnetic with a transition temperature of 6862K and asaturation magnetization of 5.560.1 Bohr magnetons per europium ion on the single-crystaldiamond, and a transition temperature of 6762K and a saturation magnetization of 2.160.1 Bohrmagnetons per europium ion on the epitaxial diamond film. 000139806 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0 000139806 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de 000139806 7001_ $$0P:(DE-HGF)0$$aMairoser, T.$$b1 000139806 7001_ $$0P:(DE-HGF)0$$aSchmehl, A.$$b2 000139806 7001_ $$0P:(DE-HGF)0$$aFischer, M.$$b3 000139806 7001_ $$0P:(DE-HGF)0$$aGsell, S.$$b4 000139806 7001_ $$0P:(DE-HGF)0$$aSchreck, M.$$b5 000139806 7001_ $$0P:(DE-HGF)0$$aAwschalom, D. D.$$b6 000139806 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b7 000139806 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b8$$ufzj 000139806 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b9$$ufzj 000139806 7001_ $$0P:(DE-HGF)0$$aSchlom, D. G.$$b10 000139806 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4833550$$gVol. 103, no. 22, p. 222402 -$$n22$$p222402 -$$tApplied physics letters$$v103$$x0003-6951$$y2013 000139806 8564_ $$uhttps://juser.fz-juelich.de/record/139806/files/FZJ-2013-05777.pdf$$yOpenAccess 000139806 909CO $$ooai:juser.fz-juelich.de:139806$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire 000139806 9101_ $$0I:(DE-HGF)0$$6P:(DE-Juel1)151381$$aExternal Institute$$b3$$kExtern 000139806 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b8$$kFZJ 000139806 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich GmbH$$b9$$kFZJ 000139806 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0 000139806 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0 000139806 9141_ $$y2013 000139806 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection 000139806 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR 000139806 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS 000139806 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index 000139806 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded 000139806 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess 000139806 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed 000139806 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG 000139806 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline 000139806 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences 000139806 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz 000139806 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List 000139806 920__ $$lyes 000139806 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0 000139806 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1 000139806 980__ $$ajournal 000139806 980__ $$aVDB 000139806 980__ $$aUNRESTRICTED 000139806 980__ $$aI:(DE-Juel1)PGI-9-20110106 000139806 980__ $$aI:(DE-82)080009_20140620 000139806 9801_ $$aFullTexts 000139806 981__ $$aI:(DE-Juel1)VDB881