| Home > Publications database > Advanced Large Area Characterization of Thin-Film Solar Modules Using Electroluminescence and Thermography Imaging Techniques |
| Contribution to a conference proceedings | FZJ-2013-05859 |
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2012
WIP
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Please use a persistent id in citations: doi:10.4229/27thEUPVSEC2012-1CV.8.22
Abstract: This paper shows that the combination of both dark lock-in thermography (DLIT) and electroluminescence (EL) imaging techniques is especially suitable for in-depth failure analysis of industrial Cu(In,Ga)Se2 (CIGS) modules and for the quantitative analysis of the local electrical cell properties, such as the internal junction voltage or the series resistances of the front and rear contact. First results obtained for amorphous silicon (a-Si:H) based thin film solar modules reveal that the EL analysis method is applicable to amorphous silicon technology as well. Using the consistent modeling of EL and DLIT images using a SPICE based model with input data generated from EL and DLIT measurements, we demonstrate that we can obtain properties of solar modules like the spatial voltage distribution, the resistances of the front contact, the back contact and the shunt resistance of local defects. Thus, we are able to investigate the impact of defects within a solar module under various conditions.
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