TY  - JOUR
AU  - Kügeler, C.
AU  - Zhang, J.
AU  - Hoffmann-Eifert, S.
AU  - Kim, S.K.
AU  - Waser, R.
TI  - Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
JO  - Journal of vacuum science & technology / A
VL  - 29
SN  - 0734-2101
CY  - New York, NY
PB  - Inst.
M1  - PreJuSER-13992
SP  - 01AD01
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - Nanostructured Pt/TiO2/Ti/Pt crosspoint junctions with lateral dimensions as small as 100 X 100 nm(2) were prepared on silicon substrates by the use of nanoimprint lithography and reactive ion etching to structure the metal electrodes combined with atomic layer deposition of the resistive switching TiO2 layer. A thickness of the amorphous TiO2 films of only 8 nm already led to functioning nanocrosspoint structures with respect to resistance switching behavior. As-prepared structures exhibited very high-resistance states with diodelike I-V characteristics. After a negative-current-driven electroforming step, the devices could be repeatably switched between two stable states. The switching characteristics were found to depend strongly on the resistance state after the electroforming procedure. Low resistance values around 1 k Omega led to high current switching, and resistances of about 10 k Omega led to low current switching. Furthermore, multilevel switching was demonstrated by the use of 10 and 50 ns set voltage pulses. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3536487]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000286679400088
DO  - DOI:10.1116/1.3536487
UR  - https://juser.fz-juelich.de/record/13992
ER  -