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@ARTICLE{Bretos:14004,
      author       = {Bretos, I. and Schneller, T. and Waser, R. and Hennings,
                      D.F. and Halder, S. and Thomas, F.},
      title        = {{C}ompositional substitutions and aliovalent doping of
                      {B}a{T}i{O}3-based thin films on {N}ickel foils prepared by
                      chemical solutiion deposition},
      journal      = {Journal of the American Chemical Society},
      volume       = {93},
      issn         = {0002-7863},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {PreJuSER-14004},
      pages        = {506 - 515},
      year         = {2010},
      note         = {This work was financially supported by BASF SE, Germany.},
      abstract     = {Several strategies were evaluated focusing on the optimum
                      reliability of thin-film ceramic capacitors derived from
                      different compositions based on BaTiO3 (BT) and prepared by
                      chemical solution deposition onto nickel foils. Film
                      crystallization was carried out at 800°C under reducing
                      conditions to prevent the detrimental oxidation of the metal
                      electrode while allowing the formation of the pure
                      perovskite phase. In a first approach, compositional
                      modifiers were introduced into the system, yielding to
                      Ba(Ti0.7Zr0.3)O3 (BTZ) and (Ba0.7Sr0.3)TiO3 (BST) solid
                      solutions. Despite the lower permittivities obtained with
                      respect to pure BT, dielectric losses and leakage current
                      densities in these films were observed to improve. With the
                      aim of further optimizing these features, the second
                      approach focuses on the defect chemistry of BST films by
                      incorporation of either donor–acceptor cations (Mn2+ and
                      Nb5+) or single rare-earth elements (Dy3+ or Y3+“magic
                      ions”) into the perovskite. The leakage conduction in the
                      associated capacitors is revealed to effectively decrease in
                      the first case, whereas doping with rare-earth cations does
                      not substantially improve the dielectric properties of the
                      ceramics. Processing effects related to the thin-film
                      configuration, rather distant from the classical scenario
                      used within the technology of multilayer bulk ceramic
                      capacitors, also account for the final properties obtained
                      in the films of this work.},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Ceramics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000274176500038},
      doi          = {10.1111/j.1551-2916.2009.03422.x},
      url          = {https://juser.fz-juelich.de/record/14004},
}