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@ARTICLE{Gerber:14006,
      author       = {Gerber, A. and Fitsilis, M. and Waser, R. and Rece, T.J.
                      and Rije, E. and Ducharme, S. and Kohlstedt, H.},
      title        = {{F}erroelectric field effect transistors using very thin
                      ferroelectric polyvinylidene fluoride copolymer films as
                      gate dielectrics},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-14006},
      pages        = {124119},
      year         = {2010},
      note         = {We thank Nicholas Pertsev and Jurgen Schubert for helpful
                      discussions. This work was supported by Volkswagen-Stiftung
                      (www.volkswagenstiftung.de) within the program "Complex
                      Materials: Cooperative Projects of the Natural, Engineering,
                      and Biosciences" under the title: "Nano-sized ferroelectric
                      Hybrids" Under Project No. 1/77 737. Work at the University
                      of Nebraska was supported by the USA National Science
                      Foundation (Grant No. ECS-0600130).},
      abstract     = {We report electrical characterization of memory elements
                      consisting of a p-type silicon field-effect transistor
                      incorporating a ferroelectric polymer Langmuir-Blodgett film
                      into the gate insulator to produce bistability through
                      polarization hysteresis. The thin gate insulator, consisting
                      of a 10 nm thick silicon oxide layer and a 35 nm thick
                      ferroelectric polymer film, enabled bistable operation at 4
                      V. Device hysteresis as a function of gate voltage was
                      evident both in the device capacitance, which was measured
                      between the gate and drain, and in the source-drain
                      conductance. The ferroelectric film polarization was not
                      saturated, even up to operating voltages of 10 V. This is
                      likely the reason for the short state retention of less than
                      10 s at room temperature. The hysteresis vanished as the
                      sample was heated toward the ferroelectric-paraelectric
                      phase transition temperature, showing that the bistability
                      was due to ferroelectric polarization reversal. (c) 2010
                      American Institute of Physics.[doi:10.1063/1.3437638]},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279993900120},
      doi          = {10.1063/1.3437638},
      url          = {https://juser.fz-juelich.de/record/14006},
}