000014008 001__ 14008
000014008 005__ 20180208232222.0
000014008 0247_ $$2DOI$$a10.1007/s10971-010-2299-1
000014008 0247_ $$2WOS$$aWOS:000284611500003
000014008 037__ $$aPreJuSER-14008
000014008 041__ $$aeng
000014008 082__ $$a600
000014008 084__ $$2WoS$$aMaterials Science, Ceramics
000014008 1001_ $$0P:(DE-Juel1)VDB96966$$aRoescher, M.$$b0$$uFZJ
000014008 245__ $$aComments on the processing of the niobium omponent for chemical solution derived niobium oxide-based thin films
000014008 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2010
000014008 300__ $$a236 - 243
000014008 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000014008 3367_ $$2DataCite$$aOutput Types/Journal article
000014008 3367_ $$00$$2EndNote$$aJournal Article
000014008 3367_ $$2BibTeX$$aARTICLE
000014008 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000014008 3367_ $$2DRIVER$$aarticle
000014008 440_0 $$014361$$aJournal of Sol-Gel Science and Technology$$v56$$x0928-0707$$y3
000014008 500__ $$aThis work was supported by the Hans. L. Merkle Foundation for the Association for the Promotion of Science and Humanities in Germany (Grant T 113/16679/07).
000014008 520__ $$aThe impact of chemical precursor modification on the electronic properties of chemical solution deposition derived niobium oxide thin-films has been evaluated. It has been found that the application of certain chemical modifications is mandatory in order to obtain electrically insulating thin-films at low processing temperatures. It is emphasized that the devised optimal way of processing for the niobium component is widely contrary to the solution based processing of potassium sodium niobate films reported so far. Regarding the physical nature of the observed instabilities, the phase evolution of solution processed niobium oxide films has been studied. It has been detected that the organic fraction in the precursor solution is stable up to high temperatures and as a result, the low temperature crystalline TT-phase of niobium oxide is preserved up to unusually high processing temperatures. The inherent structural distortion of the unit cells may present a new defect mechanism that has to be further investigated regarding the inferior ferroelectric properties of chemical solution derived potassium sodium niobate thin-films, which are often observed.
000014008 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000014008 588__ $$aDataset connected to Web of Science
000014008 65320 $$2Author$$aChemical solution deposition
000014008 65320 $$2Author$$aThin-films
000014008 65320 $$2Author$$aNiobium oxide
000014008 65320 $$2Author$$aPotassium sodium niobate
000014008 65320 $$2Author$$aElectronic properties
000014008 65320 $$2Author$$aLead-free piezoelectrics
000014008 650_7 $$2WoSType$$aJ
000014008 7001_ $$0P:(DE-Juel1)VDB3028$$aSchneller, T.$$b1$$uFZJ
000014008 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000014008 773__ $$0PERI:(DE-600)1472726-2$$a10.1007/s10971-010-2299-1$$gVol. 56, p. 236 - 243$$p236 - 243$$q56<236 - 243$$tJournal of sol gel science and technology$$v56$$x0928-0707$$y2010
000014008 8567_ $$uhttp://dx.doi.org/10.1007/s10971-010-2299-1
000014008 909CO $$ooai:juser.fz-juelich.de:14008$$pVDB
000014008 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000014008 9141_ $$y2010
000014008 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000014008 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000014008 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000014008 970__ $$aVDB:(DE-Juel1)125787
000014008 980__ $$aVDB
000014008 980__ $$aConvertedRecord
000014008 980__ $$ajournal
000014008 980__ $$aI:(DE-Juel1)PGI-7-20110106
000014008 980__ $$aI:(DE-82)080009_20140620
000014008 980__ $$aUNRESTRICTED
000014008 981__ $$aI:(DE-Juel1)PGI-7-20110106
000014008 981__ $$aI:(DE-Juel1)VDB881