Hauptseite > Publikationsdatenbank > Comments on the processing of the niobium omponent for chemical solution derived niobium oxide-based thin films > print

001     14008
005     20180208232222.0
024 7 _ |2 DOI
|a 10.1007/s10971-010-2299-1
024 7 _ |2 WOS
|a WOS:000284611500003
037 _ _ |a PreJuSER-14008
041 _ _ |a eng
082 _ _ |a 600
084 _ _ |2 WoS
|a Materials Science, Ceramics
100 1 _ |0 P:(DE-Juel1)VDB96966
|a Roescher, M.
|b 0
|u FZJ
245 _ _ |a Comments on the processing of the niobium omponent for chemical solution derived niobium oxide-based thin films
260 _ _ |a Dordrecht [u.a.]
|b Springer Science + Business Media B.V
|c 2010
300 _ _ |a 236 - 243
336 7 _ |0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
|a Journal Article
336 7 _ |2 DataCite
|a Output Types/Journal article
336 7 _ |0 0
|2 EndNote
|a Journal Article
336 7 _ |2 BibTeX
|a ARTICLE
336 7 _ |2 ORCID
|a JOURNAL_ARTICLE
336 7 _ |2 DRIVER
|a article
440 _ 0 |0 14361
|a Journal of Sol-Gel Science and Technology
|v 56
|x 0928-0707
|y 3
500 _ _ |a This work was supported by the Hans. L. Merkle Foundation for the Association for the Promotion of Science and Humanities in Germany (Grant T 113/16679/07).
520 _ _ |a The impact of chemical precursor modification on the electronic properties of chemical solution deposition derived niobium oxide thin-films has been evaluated. It has been found that the application of certain chemical modifications is mandatory in order to obtain electrically insulating thin-films at low processing temperatures. It is emphasized that the devised optimal way of processing for the niobium component is widely contrary to the solution based processing of potassium sodium niobate films reported so far. Regarding the physical nature of the observed instabilities, the phase evolution of solution processed niobium oxide films has been studied. It has been detected that the organic fraction in the precursor solution is stable up to high temperatures and as a result, the low temperature crystalline TT-phase of niobium oxide is preserved up to unusually high processing temperatures. The inherent structural distortion of the unit cells may present a new defect mechanism that has to be further investigated regarding the inferior ferroelectric properties of chemical solution derived potassium sodium niobate thin-films, which are often observed.
536 _ _ |0 G:(DE-Juel1)FUEK412
|2 G:(DE-HGF)
|a Grundlagen für zukünftige Informationstechnologien
|c P42
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |2 WoSType
|a J
653 2 0 |2 Author
|a Chemical solution deposition
653 2 0 |2 Author
|a Thin-films
653 2 0 |2 Author
|a Niobium oxide
653 2 0 |2 Author
|a Potassium sodium niobate
653 2 0 |2 Author
|a Electronic properties
653 2 0 |2 Author
|a Lead-free piezoelectrics
700 1 _ |0 P:(DE-Juel1)VDB3028
|a Schneller, T.
|b 1
|u FZJ
700 1 _ |0 P:(DE-Juel1)131022
|a Waser, R.
|b 2
|u FZJ
773 _ _ |0 PERI:(DE-600)1472726-2
|a 10.1007/s10971-010-2299-1
|g Vol. 56, p. 236 - 243
|p 236 - 243
|q 56<236 - 243
|t Journal of sol gel science and technology
|v 56
|x 0928-0707
|y 2010
856 7 _ |u http://dx.doi.org/10.1007/s10971-010-2299-1
909 C O |o oai:juser.fz-juelich.de:14008
|p VDB
913 1 _ |0 G:(DE-Juel1)FUEK412
|a DE-HGF
|b Schlüsseltechnologien
|k P42
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|v Grundlagen für zukünftige Informationstechnologien
|x 0
914 1 _ |y 2010
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |0 I:(DE-Juel1)VDB786
|d 31.12.2010
|g IFF
|k IFF-6
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|g JARA
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|x 1
970 _ _ |a VDB:(DE-Juel1)125787
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB881

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