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001     140697
005     20200921095354.0
024 7 _ |a G:(DE-Juel1)jpgi70_20120501
|2 I:(DE-Juel1)JSC-20090406
035 _ _ |a G:(DE-Juel1)jpgi70_20120501
150 _ _ |a Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
|y 2012-05-01 - 2019-04-30
371 _ _ |a Waser, R.
|c Forschungszentrum Jülich GmbH
|b Jülich
|e 52428
|d Germany
372 _ _ |a Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
|s 2012-05-01
|t 2019-04-30
510 1 _ |a VSR/JARA
|w t
550 _ _ |a Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
|0 G:(DE-Juel1)jpgi70_20190501
|w b
680 _ _ |a JSC computation time grant
681 _ _ |a Materialwissenschaft
909 C O |p authority:GRANT
|p authority
|o oai:juser.fz-juelich.de:140697
980 _ _ |a G
980 _ _ |a AUTHORITY

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