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000014122 0247_ $$2DOI$$a10.1103/PhysRevLett.105.257206
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000014122 084__ $$2WoS$$aPhysics, Multidisciplinary
000014122 1001_ $$0P:(DE-HGF)0$$aMairoser, T.$$b0
000014122 245__ $$aCharge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?
000014122 260__ $$aCollege Park, Md.$$bAPS$$c2010
000014122 300__ $$a257206
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000014122 440_0 $$04925$$aPhysical Review Letters$$v105$$x0031-9007
000014122 500__ $$aWe gratefully acknowledge discussions with L. H. Tjeng and thank T. Regier for his assistance in the XAS measurements. This work was supported by the DFG (TRR 80), the EC (oxIDes), AFOSR (FA9550-10-1-0123), and NSF (DMR-0820404).
000014122 520__ $$aRare earth doping is the key strategy to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T-C increase, however, are yet to be understood. We report measurements of n and T-C of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T-C, with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T-C.
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000014122 7001_ $$0P:(DE-HGF)0$$aSchmehl, A.$$b1
000014122 7001_ $$0P:(DE-HGF)0$$aMelville, A.$$b2
000014122 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b3
000014122 7001_ $$0P:(DE-HGF)0$$aCanella, L.$$b4
000014122 7001_ $$0P:(DE-HGF)0$$aBöni, P.$$b5
000014122 7001_ $$0P:(DE-Juel1)128648$$aZander, W.$$b6$$uFZJ
000014122 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$uFZJ
000014122 7001_ $$0P:(DE-HGF)0$$aShai, D.E.$$b8
000014122 7001_ $$0P:(DE-HGF)0$$aMonkman, E.J.$$b9
000014122 7001_ $$0P:(DE-HGF)0$$aShen, K.M.$$b10
000014122 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b11
000014122 7001_ $$0P:(DE-HGF)0$$aMannhart, J.$$b12
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000014122 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevLett.105.257206
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