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024 7 _ |2 DOI
|a 10.1103/PhysRevLett.105.257206
024 7 _ |2 WOS
|a WOS:000286751500017
024 7 _ |2 Handle
|a 2128/7278
024 7 _ |2 MLZ
|a PhysRevLett.105.257206
037 _ _ |a PreJuSER-14122
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |0 P:(DE-HGF)0
|a Mairoser, T.
|b 0
245 _ _ |a Charge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?
260 _ _ |a College Park, Md.
|b APS
|c 2010
300 _ _ |a 257206
336 7 _ |a Journal Article
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |0 4925
|a Physical Review Letters
|v 105
|x 0031-9007
500 _ _ |a We gratefully acknowledge discussions with L. H. Tjeng and thank T. Regier for his assistance in the XAS measurements. This work was supported by the DFG (TRR 80), the EC (oxIDes), AFOSR (FA9550-10-1-0123), and NSF (DMR-0820404).
520 _ _ |a Rare earth doping is the key strategy to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T-C increase, however, are yet to be understood. We report measurements of n and T-C of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T-C, with both exhibiting a maximum at high doping. On average, less than 35% of the dopants act as donors, raising the question about the limit to increasing T-C.
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700 1 _ |0 P:(DE-HGF)0
|a Schmehl, A.
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700 1 _ |0 P:(DE-HGF)0
|a Melville, A.
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700 1 _ |0 P:(DE-HGF)0
|a Heeg, T.
|b 3
700 1 _ |0 P:(DE-HGF)0
|a Canella, L.
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700 1 _ |0 P:(DE-HGF)0
|a Böni, P.
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|a Zander, W.
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|a Monkman, E.J.
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700 1 _ |0 P:(DE-HGF)0
|a Shen, K.M.
|b 10
700 1 _ |0 P:(DE-HGF)0
|a Schlom, D.G.
|b 11
700 1 _ |0 P:(DE-HGF)0
|a Mannhart, J.
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|a 10.1103/PhysRevLett.105.257206
|g Vol. 105, p. 257206
|p 257206
|q 105<257206
|t Physical review letters
|v 105
|x 0031-9007
|y 2010
856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.105.257206
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