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| 001 | 141286 | ||
| 005 | 20210129212911.0 | ||
| 037 | _ | _ | |a FZJ-2013-06480 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Stefanov, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a The 8th International Conference on Silicon Epitaxy and Heterostructures |g ICSI-8 |c Fukuoka |d 2013-06-02 - 2013-06-06 |w Japan |
| 245 | _ | _ | |a Pulsed Laser Induced Epitaxy of Silicon Germanium Tin Alloys |
| 260 | _ | _ | |c 2013 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1479570882_18392 |2 PUB:(DE-HGF) |x Other |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 700 | 1 | _ | |a Benedetti, A. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Conde, J. C. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Werner, J. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Oheme, M. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Schulze, J. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Wirths, Stephan |0 P:(DE-Juel1)138778 |b 6 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 7 |
| 700 | 1 | _ | |a Chiussi, S. |0 P:(DE-HGF)0 |b 8 |
| 856 | 4 | _ | |u http://nano.ed.kyushu-u.ac.jp/si2013/ |
| 909 | C | O | |o oai:juser.fz-juelich.de:141286 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)138778 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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