%0 Journal Article
%A Liu, Linjie
%A Jin, Lei
%A Knoll, Lars
%A Wirths, Stephan
%A Nichau, Alexander
%A Buca, Dan
%A Mussler, Gregor
%A Holländer, Bernhard
%A Xu, Dawei
%A Feng Di, Zeng
%A Zhang, Miao
%A Zhao, Qing-Tai
%A Mantl, Siegfried
%T Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
%J Applied physics letters
%V 103
%N 23
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-06671
%P 231909 -
%D 2013
%X We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000328634900030
%R 10.1063/1.4838695
%U https://juser.fz-juelich.de/record/141502