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000141502 1001_ $$0P:(DE-Juel1)145655$$aLiu, Linjie$$b0$$eCorresponding author$$ufzj
000141502 245__ $$aUltrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
000141502 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000141502 520__ $$aWe present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.
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000141502 7001_ $$0P:(DE-Juel1)138790$$aJin, Lei$$b1$$ufzj
000141502 7001_ $$0P:(DE-Juel1)162211$$aKnoll, Lars$$b2$$ufzj
000141502 7001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b3$$ufzj
000141502 7001_ $$0P:(DE-Juel1)128618$$aNichau, Alexander$$b4$$ufzj
000141502 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b5$$ufzj
000141502 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b6$$ufzj
000141502 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b7$$ufzj
000141502 7001_ $$0P:(DE-Juel1)145185$$aXu, Dawei$$b8$$ufzj
000141502 7001_ $$0P:(DE-HGF)0$$aFeng Di, Zeng$$b9
000141502 7001_ $$0P:(DE-HGF)0$$aZhang, Miao$$b10
000141502 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b11$$ufzj
000141502 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b12$$ufzj
000141502 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4838695$$gVol. 103, no. 23, p. 231909 -$$n23$$p231909 -$$tApplied physics letters$$v103$$x0003-6951$$y2013
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