TY  - JOUR
AU  - Liu, Linjie
AU  - Jin, Lei
AU  - Knoll, Lars
AU  - Wirths, Stephan
AU  - Nichau, Alexander
AU  - Buca, Dan
AU  - Mussler, Gregor
AU  - Holländer, Bernhard
AU  - Xu, Dawei
AU  - Feng Di, Zeng
AU  - Zhang, Miao
AU  - Zhao, Qing-Tai
AU  - Mantl, Siegfried
TI  - Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
JO  - Applied physics letters
VL  - 103
IS  - 23
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-06671
SP  - 231909 -
PY  - 2013
AB  - We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000328634900030
DO  - DOI:10.1063/1.4838695
UR  - https://juser.fz-juelich.de/record/141502
ER  -