Hauptseite > Publikationsdatenbank > Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers > print

001     141502
005     20240610121310.0
024 7 _ |a 10.1063/1.4838695
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024 7 _ |a 1077-3118
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024 7 _ |a 0003-6951
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037 _ _ |a FZJ-2013-06671
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082 _ _ |a 530
100 1 _ |a Liu, Linjie
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245 _ _ |a Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
260 _ _ |a Melville, NY
|c 2013
|b American Institute of Physics
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520 _ _ |a We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.
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700 1 _ |a Jin, Lei
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700 1 _ |a Knoll, Lars
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700 1 _ |a Wirths, Stephan
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700 1 _ |a Nichau, Alexander
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700 1 _ |a Buca, Dan
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700 1 _ |a Mussler, Gregor
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700 1 _ |a Holländer, Bernhard
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700 1 _ |a Xu, Dawei
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700 1 _ |a Feng Di, Zeng
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700 1 _ |a Zhang, Miao
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700 1 _ |a Zhao, Qing-Tai
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700 1 _ |a Mantl, Siegfried
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773 _ _ |a 10.1063/1.4838695
|g Vol. 103, no. 23, p. 231909 -
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|t Applied physics letters
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856 4 _ |u https://juser.fz-juelich.de/record/141502/files/FZJ-2013-06671.pdf
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