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000141505 020__ $$a978-1-4799-2307-6
000141505 037__ $$aFZJ-2013-06673
000141505 041__ $$aEnglish
000141505 1001_ $$0P:(DE-Juel1)162211$$aKnoll, Lars$$b0$$eCorresponding author$$ufzj
000141505 1112_ $$aInternational Electron Device Meeting$$cWashington DC$$d2013-12-09 - 2013-12-11$$wUSA
000141505 245__ $$aDemonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling
000141505 260__ $$bIEEE$$c2013
000141505 29510 $$aIEDM Technical Digest 2013
000141505 300__ $$a100-103
000141505 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1387531378_30136
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000141505 3367_ $$2BibTeX$$aINPROCEEDINGS
000141505 500__ $$3POF3_Assignment on 2016-02-29
000141505 520__ $$aWe present gate all around strained Si (sSi) nanowire array TFETs with high ION (64μA/μm at VDD=1.0V). Pulsed I-V measurements provide small SS and record I60 of 1×10-2μA/μm at 300K due to the suppression of  trap assisted tunneling (TAT). Scaling the nanowires to 10 nm diameter greatly suppresses the impact of TAT and improves SS and ION. Transient analysis of complementary TFET inverters demonstrates experimentally for the first time that device scaling and improved electrostatics yields to faster time response.
000141505 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000141505 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b1$$ufzj
000141505 7001_ $$0P:(DE-Juel1)128618$$aNichau, Alexander$$b2$$ufzj
000141505 7001_ $$0P:(DE-Juel1)5960$$aRichter, Simon$$b3$$ufzj
000141505 7001_ $$0P:(DE-Juel1)156277$$aLuong, Gia Vinh$$b4$$ufzj
000141505 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b5
000141505 7001_ $$0P:(DE-Juel1)144017$$aSchäfer, Anna$$b6$$ufzj
000141505 7001_ $$0P:(DE-HGF)0$$aSelmi, Luca$$b7
000141505 7001_ $$0P:(DE-HGF)0$$aBourdelle, K. K.$$b8
000141505 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b9$$ufzj
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000141505 9141_ $$y2013
000141505 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162211$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
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000141505 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000141505 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000141505 920__ $$lyes
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