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@INPROCEEDINGS{Knoll:141505,
author = {Knoll, Lars and Zhao, Qing-Tai and Nichau, Alexander and
Richter, Simon and Luong, Gia Vinh and Trellenkamp, Stefan
and Schäfer, Anna and Selmi, Luca and Bourdelle, K. K. and
Mantl, Siegfried},
title = {{D}emonstration of {I}mproved {T}ransient {R}esponse of
{I}nverters with {S}teep {S}lope {S}trained {S}i {NW}
{TFET}s by {R}eduction of {TAT} with {P}ulsed {I}-{V} and
{NW} {S}caling},
publisher = {IEEE},
reportid = {FZJ-2013-06673},
isbn = {978-1-4799-2307-6},
pages = {100-103},
year = {2013},
comment = {IEDM Technical Digest 2013},
booktitle = {IEDM Technical Digest 2013},
abstract = {We present gate all around strained Si (sSi) nanowire array
TFETs with high ION (64μA/μm at VDD=1.0V). Pulsed I-V
measurements provide small SS and record I60 of
1×10-2μA/μm at 300K due to the suppression of trap
assisted tunneling (TAT). Scaling the nanowires to 10 nm
diameter greatly suppresses the impact of TAT and improves
SS and ION. Transient analysis of complementary TFET
inverters demonstrates experimentally for the first time
that device scaling and improved electrostatics yields to
faster time response.},
month = {Dec},
date = {2013-12-09},
organization = {International Electron Device Meeting,
Washington DC (USA), 9 Dec 2013 - 11
Dec 2013},
cin = {PGI-9 / PGI-8-PT},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
url = {https://juser.fz-juelich.de/record/141505},
}