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| Hauptseite > Publikationsdatenbank > Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling > print |
| Hauptseite > Publikationsdatenbank > Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling > print |
| 001 | 141506 | ||
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| 111 | 2 | _ | |a International Electron Device Meeting |c Washington DC |d 2013-12-09 - 2013-12-11 |w USA |
| 245 | _ | _ | |a Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling |
| 260 | _ | _ | |c 2013 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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