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000141623 005__ 20210129213016.0
000141623 037__ $$aFZJ-2013-06788
000141623 041__ $$aEnglish
000141623 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding author
000141623 1112_ $$aEuropean Material Research Society 2013$$cStrasbourg$$d2014-05-26 - 2014-05-30$$gE-MRS$$wFrance
000141623 245__ $$aGrowth of graded doped Si/SiGe Heterostructure Tunnel FET
000141623 260__ $$c2013
000141623 3367_ $$033$$2EndNote$$aConference Paper
000141623 3367_ $$2DataCite$$aOther
000141623 3367_ $$2BibTeX$$aINPROCEEDINGS
000141623 3367_ $$2DRIVER$$aconferenceObject
000141623 3367_ $$2ORCID$$aLECTURE_SPEECH
000141623 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1479372618_19617$$xOther
000141623 520__ $$aTunnel FETs are the most promising ultra low power devices due to their potential of steeper subthreshold slopes and capability of using very low drive voltages. Switching is based on quantum mechanical band to band tunneling and no longer on thermal emission as in MOSFETs. We will present the epitaxial growth of novel, graded and highly doped SiGe/Si vertical heterostrucutures which possess a small band-gap and effective mass at the tunneling junction while Si is used on the drain side to minimize ambipolar behavior as will be shown with device simulations. The pseudomorphic heterostructures were grown using an AIXTRON RPCVD tool with showerhead technology. Different vertical heterostructures have been synthesized at low growth temperatures between 500°C and 600°C using Si2H6 and Ge2H6 as Si and Ge precursors, and B2H6 and PH3 as dopant sources. Graded Ge concentrations up to 55% in ultrathin 5-10 nm SiGe layers with and without additional graded B doping are aimed for source/channel tunnel junction. Several analysis methods, Reciprocal Space Mapping, RBS in the ion channeling mode and ToF-SIMS were used to fully characterize the grown layers. In addition, ToF-SIMS measurements provide high doping levels, 2-4E20 cm-3, and sharp doping profiles which allow short screening lengths, meaning excellent electrostatics. Sentaurus device simulations are used to optimize the structure parameters, e.g. doping profile, Ge concentration, for improved performance of the vertical TFETs.
000141623 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000141623 7001_ $$0P:(DE-Juel1)145410$$aBlaeser, S.$$b1
000141623 7001_ $$0P:(DE-HGF)0$$aBiswas, A.$$b2
000141623 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b3$$ufzj
000141623 7001_ $$0P:(DE-Juel1)138772$$aBernardy, P.$$b4
000141623 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b5
000141623 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b6
000141623 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b7
000141623 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b8
000141623 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b9
000141623 909CO $$ooai:juser.fz-juelich.de:141623$$pVDB
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000141623 9101_ $$0I:(DE-Juel1)ZEA-3-20090406$$6P:(DE-Juel1)133840$$aAnalytik$$b7$$kZEA-3
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000141623 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000141623 9141_ $$y2013
000141623 920__ $$lyes
000141623 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000141623 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x1
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