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@INPROCEEDINGS{Wirths:141623,
      author       = {Wirths, S. and Blaeser, S. and Biswas, A. and Tiedemann,
                      Andreas and Bernardy, P. and Holländer, B. and Mussler, G.
                      and Breuer, Uwe and Buca, D. and Mantl, S.},
      title        = {{G}rowth of graded doped {S}i/{S}i{G}e {H}eterostructure
                      {T}unnel {FET}},
      reportid     = {FZJ-2013-06788},
      year         = {2013},
      abstract     = {Tunnel FETs are the most promising ultra low power devices
                      due to their potential of steeper subthreshold slopes and
                      capability of using very low drive voltages. Switching is
                      based on quantum mechanical band to band tunneling and no
                      longer on thermal emission as in MOSFETs. We will present
                      the epitaxial growth of novel, graded and highly doped
                      SiGe/Si vertical heterostrucutures which possess a small
                      band-gap and effective mass at the tunneling junction while
                      Si is used on the drain side to minimize ambipolar behavior
                      as will be shown with device simulations. The pseudomorphic
                      heterostructures were grown using an AIXTRON RPCVD tool with
                      showerhead technology. Different vertical heterostructures
                      have been synthesized at low growth temperatures between
                      500°C and 600°C using Si2H6 and Ge2H6 as Si and Ge
                      precursors, and B2H6 and PH3 as dopant sources. Graded Ge
                      concentrations up to $55\%$ in ultrathin 5-10 nm SiGe layers
                      with and without additional graded B doping are aimed for
                      source/channel tunnel junction. Several analysis methods,
                      Reciprocal Space Mapping, RBS in the ion channeling mode and
                      ToF-SIMS were used to fully characterize the grown layers.
                      In addition, ToF-SIMS measurements provide high doping
                      levels, 2-4E20 cm-3, and sharp doping profiles which allow
                      short screening lengths, meaning excellent electrostatics.
                      Sentaurus device simulations are used to optimize the
                      structure parameters, e.g. doping profile, Ge concentration,
                      for improved performance of the vertical TFETs.},
      month         = {May},
      date          = {2014-05-26},
      organization  = {European Material Research Society
                       2013, Strasbourg (France), 26 May 2014
                       - 30 May 2014},
      subtyp        = {Other},
      cin          = {PGI-9 / ZEA-3},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/141623},
}