000141624 001__ 141624
000141624 005__ 20210129213016.0
000141624 037__ $$aFZJ-2013-06789
000141624 041__ $$aEnglish
000141624 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding author
000141624 1112_ $$aE-MRS 2013 Fall Meeting$$cWarsaw$$d2014-09-16 - 2014-09-20$$wPoland
000141624 245__ $$aEpitaxial growth studies of SiGe and SiGeSn
000141624 260__ $$c2013
000141624 3367_ $$033$$2EndNote$$aConference Paper
000141624 3367_ $$2DataCite$$aOther
000141624 3367_ $$2BibTeX$$aINPROCEEDINGS
000141624 3367_ $$2DRIVER$$aconferenceObject
000141624 3367_ $$2ORCID$$aLECTURE_SPEECH
000141624 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1479372604_19620$$xOther
000141624 520__ $$aThe need to improve the electronic device performance as well as an all-Si based integration has significantly increased the requirements for the epitaxial growth of group IV materials. In this context, the introduction of strain allows essential modifications of materials properties, like carrier mobility, effective mass or band-gap, which in turn increase their applicability. We will present epitaxial growth studies of pseudomorphic and partially relaxed group IV alloys from high Ge content SiGe, layers to high Sn content (Si)GeSn alloys on 200 mm Si(100) wafers using an AIXTRON Tricent® RPCVD tool. For nanoelectronic applications fully strained SiGe/Si channel stacks are grown at temperatures as low as 500°C using Si2H6 and Ge2H6. We show fully strained SiGe layers of up to 65% Ge and thicknesses of 16 nm exceeding the critical thickness for strain relaxation significantly. Moreover, we will discuss the transition towards the epitaxial growth of SiGeSn with high single crystalline quality at very low temperatures by adding SnCl4 achieving Sn contents up to 14%. The differences between the growth of such ternaries on Si and Ge substrates will be addressed. SiGeSn ternaries can be used as buffers to tensely strain Ge up to values that approaches the indirect to direct gap transition, as required for Ge based photonics. For all cases, layer thicknesses, composition, morphology and strain were analysed by RBS/C, Reciprocal space mapping -XRD, Raman spectroscopy and TEM.
000141624 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000141624 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b1$$ufzj
000141624 7001_ $$0P:(DE-Juel1)138772$$aBernardy, P.$$b2
000141624 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b3
000141624 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b4
000141624 7001_ $$0P:(DE-Juel1)128637$$aStoica, T.$$b5
000141624 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b6
000141624 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b7
000141624 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b8
000141624 909CO $$ooai:juser.fz-juelich.de:141624$$pVDB
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000141624 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000141624 9101_ $$0I:(DE-Juel1)ZEA-3-20090406$$6P:(DE-Juel1)133840$$aAnalytik$$b6$$kZEA-3
000141624 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000141624 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000141624 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000141624 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000141624 9141_ $$y2013
000141624 920__ $$lyes
000141624 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000141624 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x1
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000141624 980__ $$aI:(DE-Juel1)ZEA-3-20090406
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000141624 981__ $$aI:(DE-Juel1)ZEA-3-20090406