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@INPROCEEDINGS{Wirths:141624,
      author       = {Wirths, S. and Tiedemann, Andreas and Bernardy, P. and
                      Holländer, B. and Mussler, G. and Stoica, T. and Breuer,
                      Uwe and Mantl, Siegfried and Buca, Dan Mihai},
      title        = {{E}pitaxial growth studies of {S}i{G}e and {S}i{G}e{S}n},
      reportid     = {FZJ-2013-06789},
      year         = {2013},
      abstract     = {The need to improve the electronic device performance as
                      well as an all-Si based integration has significantly
                      increased the requirements for the epitaxial growth of group
                      IV materials. In this context, the introduction of strain
                      allows essential modifications of materials properties, like
                      carrier mobility, effective mass or band-gap, which in turn
                      increase their applicability. We will present epitaxial
                      growth studies of pseudomorphic and partially relaxed group
                      IV alloys from high Ge content SiGe, layers to high Sn
                      content (Si)GeSn alloys on 200 mm Si(100) wafers using an
                      AIXTRON Tricent® RPCVD tool. For nanoelectronic
                      applications fully strained SiGe/Si channel stacks are grown
                      at temperatures as low as 500°C using Si2H6 and Ge2H6. We
                      show fully strained SiGe layers of up to $65\%$ Ge and
                      thicknesses of 16 nm exceeding the critical thickness for
                      strain relaxation significantly. Moreover, we will discuss
                      the transition towards the epitaxial growth of SiGeSn with
                      high single crystalline quality at very low temperatures by
                      adding SnCl4 achieving Sn contents up to $14\%.$ The
                      differences between the growth of such ternaries on Si and
                      Ge substrates will be addressed. SiGeSn ternaries can be
                      used as buffers to tensely strain Ge up to values that
                      approaches the indirect to direct gap transition, as
                      required for Ge based photonics. For all cases, layer
                      thicknesses, composition, morphology and strain were
                      analysed by RBS/C, Reciprocal space mapping -XRD, Raman
                      spectroscopy and TEM.},
      month         = {Sep},
      date          = {2014-09-16},
      organization  = {E-MRS 2013 Fall Meeting, Warsaw
                       (Poland), 16 Sep 2014 - 20 Sep 2014},
      subtyp        = {Other},
      cin          = {PGI-9 / ZEA-3},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/141624},
}