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| 001 | 141624 | ||
| 005 | 20210129213016.0 | ||
| 037 | _ | _ | |a FZJ-2013-06789 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Wirths, S. |0 P:(DE-Juel1)138778 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a E-MRS 2013 Fall Meeting |c Warsaw |d 2014-09-16 - 2014-09-20 |w Poland |
| 245 | _ | _ | |a Epitaxial growth studies of SiGe and SiGeSn |
| 260 | _ | _ | |c 2013 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1479372604_19620 |2 PUB:(DE-HGF) |x Other |
| 520 | _ | _ | |a The need to improve the electronic device performance as well as an all-Si based integration has significantly increased the requirements for the epitaxial growth of group IV materials. In this context, the introduction of strain allows essential modifications of materials properties, like carrier mobility, effective mass or band-gap, which in turn increase their applicability. We will present epitaxial growth studies of pseudomorphic and partially relaxed group IV alloys from high Ge content SiGe, layers to high Sn content (Si)GeSn alloys on 200 mm Si(100) wafers using an AIXTRON Tricent® RPCVD tool. For nanoelectronic applications fully strained SiGe/Si channel stacks are grown at temperatures as low as 500°C using Si2H6 and Ge2H6. We show fully strained SiGe layers of up to 65% Ge and thicknesses of 16 nm exceeding the critical thickness for strain relaxation significantly. Moreover, we will discuss the transition towards the epitaxial growth of SiGeSn with high single crystalline quality at very low temperatures by adding SnCl4 achieving Sn contents up to 14%. The differences between the growth of such ternaries on Si and Ge substrates will be addressed. SiGeSn ternaries can be used as buffers to tensely strain Ge up to values that approaches the indirect to direct gap transition, as required for Ge based photonics. For all cases, layer thicknesses, composition, morphology and strain were analysed by RBS/C, Reciprocal space mapping -XRD, Raman spectroscopy and TEM. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 700 | 1 | _ | |a Tiedemann, Andreas |0 P:(DE-Juel1)128639 |b 1 |u fzj |
| 700 | 1 | _ | |a Bernardy, P. |0 P:(DE-Juel1)138772 |b 2 |
| 700 | 1 | _ | |a Holländer, B. |0 P:(DE-Juel1)125595 |b 3 |
| 700 | 1 | _ | |a Mussler, G. |0 P:(DE-Juel1)128617 |b 4 |
| 700 | 1 | _ | |a Stoica, T. |0 P:(DE-Juel1)128637 |b 5 |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 6 |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 7 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 8 |
| 909 | C | O | |o oai:juser.fz-juelich.de:141624 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)138778 |
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| 910 | 1 | _ | |a Analytik |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |b 6 |6 P:(DE-Juel1)133840 |
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| 914 | 1 | _ | |y 2013 |
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