guest ::
| Home > Publications database > Investigations of channel direction influence on the effective hole mobility of SOI(110) and highly compressively strained Si0.5Ge0.5/SOI(100) p-MOSFETs |
| Home > Publications database > Investigations of channel direction influence on the effective hole mobility of SOI(110) and highly compressively strained Si0.5Ge0.5/SOI(100) p-MOSFETs |
| Poster (Other) | FZJ-2013-06791 |
; ; ; ; ; ;
2013
Abstract: To enhance the MOS transistor performance high mobility channel materials are required, in addition to high-k metal gate stacks and continued scaling. For this purpose we investigated the electronic transport of (110)SOI and highly compressive Si0.5Ge0.5 on (100)SOI in ultrathin body, long channel p-MOSFETs. The effective hole mobility for different channel orientations is measured and compared to similar devices fabricated on (100)SOI taken as reference. For all samples gates stacks are formed using HfO2 and/or La based rare earth oxides as gate oxide with TiN metal gates. The electrical characterization at room temperature was extended to low temperatures down to 77K. All devices show excellent transfer and output characteristics with Ion/Ioff ratios of up to ~1E10 (for 77K) and a perfectly linear temperature dependence of the subthreshold swing. At 77K the effective peak hole mobility of strained Si0.5Ge0.5/SOI pMOSFTEs reaches 320 cm2/Vs, [100] and above 400 cm2/Vs for [110] channel orientations. Different from Si(100) devices the hole mobility in strained SiGe MOSFETs is about 20% higher in the [100] as in the [110] crystal direction. At RT the [010] and [011] channel directions show an increase of the peak mobility of about 2.5 and 2, respectively, with respect to the SOI reference devices. In addition we will also address the effect of substrate orientation by comparing (110) and (100) SOI devices.
|
The record appears in these collections: |