000141673 001__ 141673
000141673 005__ 20210129213024.0
000141673 0247_ $$2doi$$a10.1109/LPT.2013.2291571
000141673 0247_ $$2WOS$$aWOS:000329873200022
000141673 037__ $$aFZJ-2014-00042
000141673 041__ $$aEnglish
000141673 082__ $$a620
000141673 1001_ $$0P:(DE-HGF)0$$aOehme, M.$$b0$$eCorresponding author
000141673 245__ $$aGeSn heterojunction LEDs on Si substrates
000141673 260__ $$aNew York, NY$$bIEEE$$c2014
000141673 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1389626583_12612
000141673 3367_ $$2DataCite$$aOutput Types/Journal article
000141673 3367_ $$00$$2EndNote$$aJournal Article
000141673 3367_ $$2BibTeX$$aARTICLE
000141673 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000141673 3367_ $$2DRIVER$$aarticle
000141673 500__ $$3POF3_Assignment on 2016-02-29
000141673 520__ $$aGeSn on Si light-emitting diodes (LEDs) is investigated for different Sn concentrations up to 4.2% and they are compared with an LED made from pure Ge on Si. The LEDs are realized from in-situ doped pin junctions in GeSn on Ge virtual substrates. The device structures are grown with a special ultra-low temperature molecular beam epitaxy process. All LEDs clearly show direct bandgap electroluminescence emission at room temperature. The light intensity of the compressively strained GeSn LEDs increases with higher Sn concentration. The in-plane strain of the LEDs is determined with reciprocal space mapping. The bandgap energies of the emitting GeSn layer are calculated from the emission spectra.
000141673 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000141673 7001_ $$0P:(DE-HGF)0$$aKostecki, K.$$b1
000141673 7001_ $$0P:(DE-HGF)0$$aArguirov, T.$$b2
000141673 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b3$$ufzj
000141673 7001_ $$0P:(DE-HGF)0$$aYe, K.$$b4
000141673 7001_ $$0P:(DE-HGF)0$$aGollhofer, M.$$b5
000141673 7001_ $$0P:(DE-HGF)0$$aSchmid, M.$$b6
000141673 7001_ $$0P:(DE-HGF)0$$aKaschel, M.$$b7
000141673 7001_ $$0P:(DE-HGF)0$$aKörner, R.$$b8
000141673 7001_ $$0P:(DE-HGF)0$$aKittler, M.$$b9
000141673 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b10$$ufzj
000141673 7001_ $$0P:(DE-HGF)0$$aKasper, E.$$b11
000141673 7001_ $$0P:(DE-HGF)0$$aSchulze, J.$$b12
000141673 773__ $$0PERI:(DE-600)2025386-2$$a10.1109/LPT.2013.2291571$$n2$$p187-189$$tIEEE photonics technology letters$$v26$$x1941-0174
000141673 8564_ $$uhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6671355&searchWithin%3DGeSn%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6693740%29
000141673 8564_ $$uhttps://juser.fz-juelich.de/record/141673/files/FZJ-2014-00042.pdf$$yRestricted$$zPublished final document.
000141673 909CO $$ooai:juser.fz-juelich.de:141673$$pVDB
000141673 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000141673 9101_ $$0I:(DE-HGF)0$$6P:(DE-Juel1)159422$$aExternal Institute$$b8$$kExtern
000141673 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b10$$kFZJ
000141673 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000141673 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000141673 9141_ $$y2014
000141673 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000141673 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000141673 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000141673 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000141673 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000141673 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000141673 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000141673 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000141673 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000141673 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000141673 920__ $$lyes
000141673 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000141673 980__ $$ajournal
000141673 980__ $$aVDB
000141673 980__ $$aUNRESTRICTED
000141673 980__ $$aI:(DE-Juel1)PGI-9-20110106