% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Oehme:141673,
      author       = {Oehme, M. and Kostecki, K. and Arguirov, T. and Mussler, G.
                      and Ye, K. and Gollhofer, M. and Schmid, M. and Kaschel, M.
                      and Körner, R. and Kittler, M. and Buca, D. and Kasper, E.
                      and Schulze, J.},
      title        = {{G}e{S}n heterojunction {LED}s on {S}i substrates},
      journal      = {IEEE photonics technology letters},
      volume       = {26},
      number       = {2},
      issn         = {1941-0174},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-00042},
      pages        = {187-189},
      year         = {2014},
      abstract     = {GeSn on Si light-emitting diodes (LEDs) is investigated for
                      different Sn concentrations up to $4.2\%$ and they are
                      compared with an LED made from pure Ge on Si. The LEDs are
                      realized from in-situ doped pin junctions in GeSn on Ge
                      virtual substrates. The device structures are grown with a
                      special ultra-low temperature molecular beam epitaxy
                      process. All LEDs clearly show direct bandgap
                      electroluminescence emission at room temperature. The light
                      intensity of the compressively strained GeSn LEDs increases
                      with higher Sn concentration. The in-plane strain of the
                      LEDs is determined with reciprocal space mapping. The
                      bandgap energies of the emitting GeSn layer are calculated
                      from the emission spectra.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000329873200022},
      doi          = {10.1109/LPT.2013.2291571},
      url          = {https://juser.fz-juelich.de/record/141673},
}