%0 Journal Article
%A Skaftouros, S.
%A Ozdogan, K.
%A Sasioglu, E.
%A Galanakis, I.
%T Search for spin gapless semiconductors: The case of inverse Heusler compounds
%J Applied physics letters
%V 102
%@ 1077-3118
%C Melville, NY
%I American Institute of Physics
%M FZJ-2014-00212
%P 022402
%D 2013
%Z Submitted to Applied Physics Letters
%X We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000313670200045
%R 10.1063/1.4775599
%U https://juser.fz-juelich.de/record/141874