TY  - JOUR
AU  - Skaftouros, S.
AU  - Ozdogan, K.
AU  - Sasioglu, E.
AU  - Galanakis, I.
TI  - Search for spin gapless semiconductors: The case of inverse Heusler compounds
JO  - Applied physics letters
VL  - 102
SN  - 1077-3118
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2014-00212
SP  - 022402
PY  - 2013
N1  - Submitted to Applied Physics Letters
AB  - We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000313670200045
DO  - DOI:10.1063/1.4775599
UR  - https://juser.fz-juelich.de/record/141874
ER  -