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@ARTICLE{Skaftouros:141874,
author = {Skaftouros, S. and Ozdogan, K. and Sasioglu, E. and
Galanakis, I.},
title = {{S}earch for spin gapless semiconductors: {T}he case of
inverse {H}eusler compounds},
journal = {Applied physics letters},
volume = {102},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2014-00212},
pages = {022402},
year = {2013},
note = {Submitted to Applied Physics Letters},
abstract = {We employ ab-initio electronic structure calculations to
search for spin gapless semiconductors, a recently
identified new class of materials, among the inverse Heusler
compounds. The occurrence of this property is not
accompanied by a general rule and results are materials
specific. The six compounds identified show semiconducting
behavior concerning the spin-down band structure and in the
spin-up band structure the valence and conduction bands
touch each other leading to $100\%$ spin-polarized carriers.
Moreover these six compounds should exhibit also high Curie
temperatures and thus are suitable for spintronics
applications.},
cin = {IAS-1 / PGI-1},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106},
pnm = {422 - Spin-based and quantum information (POF2-422)},
pid = {G:(DE-HGF)POF2-422},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000313670200045},
doi = {10.1063/1.4775599},
url = {https://juser.fz-juelich.de/record/141874},
}