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| 001 | 141874 | ||
| 005 | 20210129213053.0 | ||
| 024 | 7 | _ | |a 2128/5769 |2 Handle |
| 024 | 7 | _ | |a 10.1063/1.4775599 |2 DOI |
| 024 | 7 | _ | |a WOS:000313670200045 |2 WOS |
| 024 | 7 | _ | |a altmetric:1015625 |2 altmetric |
| 037 | _ | _ | |a FZJ-2014-00212 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Skaftouros, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Search for spin gapless semiconductors: The case of inverse Heusler compounds |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 141874 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a Submitted to Applied Physics Letters |
| 520 | _ | _ | |a We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. |
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| 700 | 1 | _ | |a Ozdogan, K. |0 P:(DE-HGF)0 |b 1 |
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| 700 | 1 | _ | |a Galanakis, I. |0 P:(DE-HGF)0 |b 3 |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |v 102 |t Applied physics letters |p 022402 |x 1077-3118 |
| 856 | 4 | _ | |y Publishers version according to licensing conditions. |z Published final document. |
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| 914 | 1 | _ | |y 2013 |
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